Analytical investigation of specific heat capacities at constant volume and pressure of semiconductors by using einstein-debye approach

In this thesis, taking into account the Einstein-Debye approach, the specific heat capacities of some semiconductors have been investigated in a wide range of temperatures. As can be seen from the formulas, the precise calculation of the self-heat depends on the results obtained from the analytical formulas created for the Debye function. It is seen from the studies that the formulas created for the Einstein-Debye approach give results with the desired precision according to the Einstein and Debye approaches. For this reason, the calculation of the specific heat capacities of semiconductors, which are considered as examples in the thesis, has been examined according to the proposed method and formulas. There are few studies in the literature on the investigation of thermodynamic properties of solids according to the Einstein-Debye approach. In the proposed thesis, the changes in the specific heat amount of semiconductors according to the temperature are calculated according to Einstein-Debye approach and the results are compared. The results obtained will be useful in technological applications of semiconductors.