Characterization of Sn+4/A+2 (A=Zn, Mg) cosubstituted In2O3 transparent conductive oxides produced by high temperature solid state reaction at temperature

Transparent conductive oxides play a critical role in modern technology, and the most popular of these is indium tin oxide. However, indium is an expensive metal due to its scarcity. In this work, various characterization techniques were used to investigate the optical, electrical and structural of the In2O3 ternary system modified with ZnO/MgO and SnO2. This new transparent conducting oxide was formed in various compositions; it can be represented as AxIn2-2xSnxO3. Hall measurement showed that the samples have n-type conductivity value and the highest carrier concentration was measured as 1,474 x 1020 for MITO-20 and 1,164 x 1019 cm-3 for ZITO-20. In conclusion, this study emphasizes the importance of cosubstitution to reduce the indium content in indium tin oxide. In addition, thin film studies and applications should be initiated after this study. In parallel, the samples should be subjected to a detailed defect investigation by low temperature PL measurements.