Yükselme eğimi kontrollü farksal çıkış sürücüsü tasarımı

In the last two decades, usage area of integrated circuits have been gradually increased with the developments in the process technology. Moreover, Due to developments in process technology, the area of integrated circuit is reduced and digital blocks has been able to switch at high speeds. Although the switching activities is performed in the digital blocks of the integrated circuit, these activities may reveal an undesired noise which effects the performance of both analog and digital blocks in the integrated circuits. This noise is called as a simultaneous switching noise or inductive noise. The simultaneous switching noise increases depending on the frequency of switching activity and the amount of a current which sourced to a load. Various techniques is proposed to solve this phenomena up to the present. However, the proposed circuits provides solution for specific application and they can not create the desired effect for different load types. For instance, inductive loads cause an voltage spikes at the output signals when they are driven by a rapid current changes. This ringings reveal an distortion at the output signals, even they may reach the voltage levels which cause an permanent damage to the circuit In this study, an output driver structure, which is capable to drive low impedance load in a controlled manner, is discussed. The sensitivity to the simultaneous switching noise is reduced by adding a slew rate and amplitude control system to the circuit. Moreover, the circuit is optimized to drive inductive loads which is common element in the industrial applications. Proposed output driver is implemented with XFAB's 0.35 μm CMOS process with high voltage option. Drain terminal breakdown voltage of high voltage transistors is 10 V. Designed circuit consumes 52.8 mW in the high power mode and 33 mW in lower mode under typical conditions. These values does not represents the power which is transferred to the load. The current transferred to the load is maximum 200 mA in the high power mode and maximum 100 mA in the low power mode. Total area of the chip is 2x2.45 mm 2 and it consists two output drivers which are independent from each other.