Preparation by sol-gel of ZnO/NiO pn junction diode and investigation of their electronic properties

Preparation By Sol-Gel Of ZnO/NiO pn Junction Diode And İnvestigation Of Their Electronic Properties The ZnO and NiO films were synthesized by the sol-gel method. The structural and optical properties of the films were investigated by atomic force microscopy and UV-VIS spectrophotometers. The optical band gaps of ZnO and NiO films were obtained to be 3,198 and 3,827 eV respectively. The ZnO/NiO pn junction diode was prepared by the sol-gel method. The electrical characteristics of the diode were analyzed using thermionic emision and Norde methods. The electrical parameters such ideality factor, barrier height as series resistance were found to be 6,46, 1,036 eV and 39,1 MΩ respectively. At the higher electric fields, the charge transport mechanism of the diode is controlled by the space charge limited currents. It is evaluated that the prepared ZnO/NiO pn diode can be used in transparent electronic devices applications. Key Words: ZnO, NiO, pn junction diode, Sol-gel