The investigation of temperature dependent electrical characteristic of Ag/GaP Schottky diodes

In this study ohmic diode was prepared by evaporating Al with thermal evaporation to one of the surfaces of GaP semiconductor which was (100) directional, 300µm thick, mixed with S and prepared with the method of LEC ( Liquid Encapsulated Czochralsky ) and Ag/GaP diode was prepared by evaporating Ag to the other surface, I-V measurements were made for ten different points of this diode at ambient temperature. For a diode at any given point I-V measurements were made in the range of (D6) 298-423 K temperature. By using these measurements I-V, ln(I)-V, dV/(dlnI)-I and H(I)-I graphics were drawn. By benefiting from these graphics thermionic, emission theory and ideality factor, barrier height and series resistance parameters of Schottky diode according to Cheung method were calculated. It was determined that the values of ideality factor which were calculated at ambient temperature were in the range of 1,73 and 3,60 and barrier heights are in the range of 0,50 and 0,69 eV. It was calculated that for D6 diode in the range of 298 ? 423 K temperature the values od ideality factor changed in the range of 2,26 and 3,03 and the values of barrier height changed in the range of 0,54 and 0,70 eV. Rs values were calculated from the tilt of dV/d(lnI)-I and H(I)-I graphics. It was observed that these calculated values were in the range of 23,63 and 29,40 ?. It was determined experimentally from these parameters that ideality factor and series resistance values decreased with the increase of temperature but barrier height values increased with the increase of temperature.