The investigation in electrical properties Al/Ni(II) nikotinat / p-si ve Al/Zn(II) nikotinat / p-Si photodiodes

In order to fabricate the semiconductor-based photodetectors, Ni and Zn-centered nicotinate complexes were synthesized chemically. The synthesized Ni and Zn-centered nicotinates (Ni-nicotinate and Zn-nicotinate) were analyzed using ultraviolet-visible (UV-Vis) spectrometry and thermogravimetric analysis (TGA) techniques. The synthesized complex materials were coated between Al and p-Si by spin coating technique, and Al/Ni (II) Nicotinate/p-Si and Al/Zn (II) Nicotinate/p-Si sandwich structures were obtained. The photoelectrical characteristics of the produced devices were analyzed by photo-transient (I-t) and current-voltage (I-V) measurements under dark and different luminous power intensities. In light of the measurements made, series resistance (Rs), ideality factor (n), and barrier height values (), which are very important electrical parameters, were obtained. Various parameters such as specific detectivity, responsivity, and photosensitivity were calculated using I-t analysis based on exposed light power. Also external quantum efficiency (EQE) values were calculated with I-t measurements carried out under lighting conditions at different wavelengths. Last of all, the Al/Ni (II) Nicotinate/p-Si and Al/Zn (II) Nicotinate/p-Si structures have good performance in photodiode designs and can be developed for use in optoelectronic technologies.