y-ray irradiation effect on the calculation of electronic parameters of a Al/p-Si Schottky barrier diode

In this study, we have used p-Si with (100) orientation, 400 ?m thickness and resistivity 5-10 ?cm. Our purpose is experimentally to investigate the characteristic parameters and the interface state density distribution of metal/semiconductor (MS) Al/p-Si contacts. Therefore, it has also been exampled the reason of the linear relationship between effective barrier heights and ideality factors.The Si was irradiated under 60Co ?-ray irradiation at room temperature before the fabrication of Al/p-Si Schottky diode. Characteristic parameters of the diode were determined from its current-voltage (I-V) measurements before and after irradiation. It was seen that Al/p-Si with ?--ray irradiation has still a rectification behavior. ?--ray irradiation has shown a big effect on electrical parameters of Al/p-Si Schottky diode with higher values of ideality factor and barrier height. Furthermore interface state density increased after irradiation.The N_ss values obtained taking into account the series resistance values are lower than those obtained without considering the series resistance. After considering the series resistance value in the calculation related to the interface state density distribution (ISDD), an exponential rise of the interface state density for the MS Al/p-Si contact from midgap towards the top of valence bands.Keywords: Schottky barriers; Schottky diodes; y-ray irradiation; Series resistance