Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Al/TiO2/P-Si schottky diodes

In this study, electrical analysis of Al/TiO2/p-Si Schottky diode was investigated at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied by using Thermionic Emission (TE) theory. The main electrical parameters of the Al/TiO2/p-Si Schottky diode such as ideality factor (n), zero bias barrier height (?Bo), series resistance (Rs), and interface state density (Nss) values were found. Also, the values of n, ?Bo and Rs were obtained by using the Cheung's method. It was shown that electrical parameters obtained from TE theory and Cheung's method exhibit close agreement with each other. The energy density distribution profiles of the Nss were acquired from the forward bias I-V characteristics by taking into account the voltage dependence of the effective barrier height (?e) and idealite factor (nV) of devices. The capacitance voltage (C-V) and conductance-voltage (G/w-V) characteristics of diode were investigated in different frequencies (50-500 kHz). In addition, the values of Nss were performed by using Hill-Coleman method. As a result, we have observed that the values of Rs and Nss affected the electrical parameters quietly.