Examination of AlxGa1-xAs/GaAs nanostructures with chemical etching method
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Abstract (EN)
In this study, the surface morphology and sample quality of wet chemical etched AlxGa1-xAs/GaAs nanostructures which were growth by MBE techniques and single crystals has been examined. The change in thickness of sample with profilometry, the roughness on the surface with spectroscopic elipsometry and the displays of defect on surface with optic microscop are analyzed. The etching solution used in this study was citric acid/hydrogen peroxide (C6H8O7/H2O2). Herewith, we present the comparison between our studies and previously carried studies for citric acid/hydrogen peroxide etching in the literature. The etching solution value, which removes a material faster than other one and makes selective etching, is determined. Key Words : AlGaAs, GaAs, Etching, MBE, Profilometry
Author
Yusuf Alper Ulu
How to Cite
Yusuf Alper Ulu (Master Thesis). Examination of AlxGa1-xAs/GaAs nanostructures with chemical etching method, 2007, Gazi University.
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