The investigation oftemperature dependent electric and dielectric characteristics of Au/SİO2/n-Sİ (MIS) structure

In this study, the temperature dependence of the electric and dielectric characteristics of Au/SiO2/n-Si (MIS) structures were investigated in the temperature range of 120-400 K at 1 MHz. The temperature dependence of ac electrical conductivity (sac) and resistivity (?ac), dielectric constant (?'), dielectric loss (?''), loss tangent (tan?), the real and imaginary parts of electric modulus (M' and M") were obtained from capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The ?', ?'' and sac values increase as exponentially with increasing temperature between 280 K and 400 K. On the other hand, these values remain almost constant between 120 K and 240 K. In addition, the experimental dielectric datas were analyzed by considering electric modulus formalism. The lnsac vs. 1000/T plot gives two linear regions with different slopes at low (120-240 K) and high (280-400 K) temperature ranges. The values of activation energy for two different conduction mechanisms were found as 4 meV and 201 meV for low and high temperatures, respectively.