Investigation of the properties of n-CdTe and p-CdTe semiconductors produced by electrodeposition method

CdTe semiconductor thin films used in solar cell applications have an ideal band gap of 1.45 eV and a high photon absorption coefficient (5.1x105 cm-1). In solar cell applications, p-CdTe / n-CdS structure is used. On the other hand, the production of n-CdTe thin films is important for making the solar cell with more efficient p-CdTe / n-CdTe / n-CdS structure. Thin films of n and p type CdTe were produced on indium tin oxide (ITO) coated glass surfaces by three electrode electrochemical deposition method. Aqueous solutions of 10 mM CdCl2, 20 mM Na2Te03 and 200 mM LiCl were used and the pH of the electrolyte was adjusted to ~ 2.0 using HCl acid. Using cyclic voltammetry, Cd and Te'un coating potentials were determined. The deposition was performed for 120 sec at -0.8 V for n-type CdTe. For p-type CdTe, deposition was first performed at -0.4V for 40s and then at -0.6V for 100s. ITO were performed at room temperature CdTe thin films is investigated by means of some techniques such as scanning electron microscopy (SEM), Ultraviolet–Visible (UV–Vis) spectroscopy, Mott-Schottky measurements.