Switched capacitor circuit design and applications using FinFET

Given modern technology trends, the importance of structures suitable for semiconductor integrated circuit manufacturing processes and versatile designs is increasing. This thesis examines one of the most significant structures developed to meet this demand: switched capacitor circuits and their various applications. In the first part of the study, the physical structure of FinFET switches, their characteristic curves, and the reasons for using them as switches are discussed in detail. Additionally, the reasons for preferring them in switched capacitor circuits are also examined. FinFET is a multi-gate device built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel. This structure is surrounded by a gate that controls the current. The prominent features of FinFET structures are their speed, the ability to be produced in very small sizes, and their low power consumption. The first section also provides information on the basic principles and operation of switched capacitors. The importance and application areas of these circuits in modern electronic systems are discussed. In the second part of the thesis, the implementation of three different integrator models using MOSFET and FinFET is examined. This section also details the advantages of FinFET over MOSFET and why these advantages make FinFETs preferable. In the next section, a proposed CFC Op-Amp with DDSB biasing is presented. This Op-Amp is discussed in terms of the advantages it offers compared to similar structures. Finally, an integrator model designed using the proposed Op-Amp is presented.The simulations in this thesis were performed using LTspice simulation tools, and the FinFET models used in the simulations are 32 nm PTM models. The results of the study provide significant contributions to improving the performance and efficiency of modern semiconductor devices.