Electrophysical properties of Zn-doped Cds thin films with electrodeposition method for photovoltaic applications

With a band gap of 2.42eV, CdS (Cadmium Sulphide) semiconductor is an important semiconductor material that has been studied for a long time to be used as a buffer layer for heterojunction solar cells. The semiconductor thin film with electrochemical deposition becomes increasingly popular because it has advantages of economical and capability of large area deposition. In this study, Zn (Zinc) doped cadmium sulfide thin films have been deposited onto indium tin oxide glass substrate by electrodeposition method at 50°C temperature using a simple two-electrode system and aqueous solutions of zinc chloride, cadmium chloride and sodium thiosulfate solutions. The effect of Zn doped on structural, morphological and optical properties was studied. When the results were examined, it was seen that the Zn doped CdS semiconductor thin film was obtained in a nano structure and homogeneously. It was also determined that the Zn additive increased the band gap of the CdS semiconductor thin film.