Preporation of GaP/metal Schottky diode and investigation of electronic properties

Preporation of GaP/Metal Schottky Diode and İnvestigation of Electronic PropertiesIn this study, optical and electrical properties of Gallium Phosphide (GaP) thin film prepared by Liquid-encapsulated Czochralski (LEC) technique were investigated. The optical properties of the sample were investigated by obtain absorption and transmittance measurements. In this measurements GaP thin film band gap was obtained as 2,24 eV. The change of refractive index- wavelength and oscillator energy were investigated. Later, on one surface of semiconductor layer was prepared with Al coating and ohmic contact was prepared. The other surface of semiconductor was prepared by evaporated silver metal and Schottky contact was prepared. I-V and C-V measurements of the Ag/GaP/Al contact were investigated. I-V and C-V diagrams were drown. Schottky Diode?s ideality factor (n), barrier height ( ? B), series resistance (RS) and donor concentration (Nd) were calculated.Key Words: Semiconductor, band gap, optical properties, Schottky diode.