Solar cell used in making the preparation and characterization of n-type SnS2 thin films
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Abstract (EN)
In this study, SnS2 film thin films were prepared by the chemical bath deposition (CBD) technique onto glass substrates deposited at 40-80 C. X-ray diffraction spectra of the films have shown that the films are amorphous in structure. From the Hall Effect measurement, it was found that SnS2 thin film exhibits n-type conduction. Its electrical resistivity and mobility were calculated to be (3.63-4.14)x105 ?.cm and 10-68 cm2/V.s respectively. From the absorption spectra measurements, optical band gap values are calculated to be 2,0-2,40 eV
Author
Gülay Altındemir
How to Cite
Gülay Altındemir (Master Thesis). Solar cell used in making the preparation and characterization of n-type SnS2 thin films, 2011, Çukurova University.
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