The influence of substrate temperature on electrical parameters of reactive sputtered Cr2O3/n-Si heterojunctions

The purpose of this study was to see the effects of substrate temperature on Cr2O3/n-Si heterojunctions. For this purpose Cr2O3/n-Si thin films were formed on n.Si and glass substrates at 40,150 and 250 C° by radio frequency (RF) reactive technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr2O3/n-Si thin films were analyzed using Uv-vis data . The band gaps of the films were compared. The electrical properties of Cr2O3/n-Si heterojunction were tested by their current voltage (I-V) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr2O3 thin film at 250 °C gave better rectification. The characteristics electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage (C-V) data were compared with the one calculated from I-V measurements.