The fabrication of InGaAsP/InP multi quantum well ridge waveguide laser diodes and the analysis of lazer diode parameters

The 1,3 and 1,5 ?m emission wavelength InxGa1-xAsyP1-y/InP multi quantumwell (MQW) laser diode structures used in this work were grown using metalorganic chemical vapor deposition (MOCVD) technique. The fabrication ofridge waveguide Fabry-Perot laser diodes with different passivation layers (SiO2and SiNx) were made using photolithography system. The laser parameteranalysing results shows that the laser diode with SiO2 passivation layer haslower threshold current, differential resistance and higher output power. Toimprove the ohmic contact properties the Transmission Line Model (TLM)samples were fabricated. According to our knowledge, the Au and non-Aubased rare earth metal silicate ohmic contacts were formed for the first timeand the analyzing of ohmic contacts were performed using TLM. As a result,the obtained specific contact resistivities were found in the same order ofnowadays optoelectronic device?s contact resistivities.