Investigation of electron transport properties AllnN/AlN/(InGaN)/GaN in multi-structures with InGaN quantum well
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Abstract (EN)
In this study, Hall measurement and conductivity analyse have been investigated for 3 samples of AlInN/AlN/(InGaN)/GaN multi-structures with InxGa1-xN- quantum well grown by MOVPE crystal growth method. Resistivities, Hall mobilities and carrier concentrations were measured in a temperature range of 15-300K and 0,4T magnetic field. Electron transport characteristics of the samples with the values of x =0 , 0,12 and 0,18 were explained. Also, upon of scattering mechanisms that effect the mobility of electrons were discussed. Resistivity analyses were performed which are dependent to the resistivity measurements.KeyWords : MOVPE, InxGa1-xN-quantum well, scattering analys, resistivty analysis, ?0 prefactor, Theory of Pudalov
Author
Gülser Karakoç
How to Cite
Gülser Karakoç (Master Thesis). Investigation of electron transport properties AllnN/AlN/(InGaN)/GaN in multi-structures with InGaN quantum well, 2012, Gazi University.
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