The growth of InxGa1-xAs / GaAs multi quantum well structure with mbe technique: The investigation of the structural, optical and electrical properties

In this work InxGa1-xAs/GaAs multi quantum well structure was grown by Semicon VG80H Molecular Beam Epitaxy system. The structural analysis was performed by X-ray diffraction method. The obtained Rocking curves shows that the the multi layer interface smoothess are small and the growth epilayers have enough thickness and homogeneity. The temperature dependent optical analyses were performed by photoluminescence method. The forbidden band gap and the In composition was obtained from room temperature optical measurements and the peak energy, activation energy and the full width at half maximum values were obtained from temperature dependent optical measurements. For the electrical analysis of the multi quantum well structure, Au Schottky contacts were formed and the current-voltage measurements were taken in the wide temperature range (80-295 K). According to the electrical analysis, the decrease in the ideality factor and the increase in the zero-bias barrier height with temperature was observed.