The investigation of temperature dependent electrical transport properties of InxGa1-xP/GaAs
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Abstract (EN)
In this work, temperature dependent electrical transport properties of doped (with Si and Be) InxGa1-xP/GaAs alloy semiconductors grown Molecular Beam Epitaxy (MBE) have been investigated. The temperature dependent Hall effect and resistivity measurements were made in a temperature range of 30-300 K at a constant magnetic field of 0,4 Tesla. Using the conventional analyses method, it has been determined that the conductivity takes place in the impurity band. The measurement results have been analyzed using the metallic type of impurity band conduction, and the transport parameters have also been obtained. It has been shown that the parameters obtained are in agreement with the related literature. Finally, it has been determined electron-electron and weak localization interactions were dominated the conductivity in doped InxGa1-xP/GaAs alloy semiconductors.
Author
Emine Boyalı
How to Cite
Emine Boyalı (Master Thesis). The investigation of temperature dependent electrical transport properties of InxGa1-xP/GaAs, 2013, Gazi University.
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