The investigation of optical, structural, electrical properties of ZnS and Zn1-xSMnx (0.01≤x≤0.1) semiconductor thin films prepared by chemical bath deposition

In this study, ZnS and Zn1-xSMnx (0.01 ≤ x ≤ 0.1) semiconductor thin films were obtained by using chemical bath deposition (CBD) method on glass substrates at 80 °C and different deposition times (4, 6, 8 hours). The obtained thin films were investigated with doping rate and deposition time, how to change the optical, electrical and structural properties. To determine the optical properties of the films UV/vis spectrophotometer was used. Optical transmittance (%T) and optical absorption (A) values of the films were determined in the wavelength range 300-1100 nm at room temperature. The obtained with data basic optical parameters of the films absorption coefficient (α), refractive index (n), extinction coefficient (k), real and imaginary dielectric constants (Ԑ1, Ԑ2), the energy band gap (Eg) and band sharpness (B) values were calculated. ZnS and Zn1-xSMnx (0.01 ≤ x ≤ 0.1) of the thin films optical transmittance values were found to be 50-95% in the visible region. The refractive index (n) values were calculated in the range 1.20-5.09 in the visible region. Energy band gap values (Eg) of the films were found to be 2.90-3.94 eV. Band sharpness (B) values were calculated in the range 6.95x10^9-5.77x10^12 eV/cm2. From the Hall effect measurement, it was found that ZnS and Zn1-xSMnx (0.01 ≤ x ≤ 0.1) thin film exhibits n-type conduction. Its electrical resistivity (ρ) values were calculated in the range 1.990x10^4-1.014x10^6 Ω•cm. XRD measurements show that the films are crystallized in the hexagonal phase (space group: P3m1).