Production and characterization of SrTiO3 thin films by magnetron sputtering

In this study, we investigated the production and characterization of SrTiO3 thin films. (RF) Magnetron sputtering method was used. The n- type silicon substrate (Si) on the Radio frequency (RF) electrical characterization of SrTiO3 thin films deposited on n type Si substrate. SrTiO3/n?Si structures, Frequency dependent capacitance-voltage (C?V) and conductance-voltage (G/??V) characteristics have been investigated by considering the effect of series resistance (Rs) and interface states (Nss) in the frequency range of 10 kHz ? 1 MHz and between 80-300 K temperature. The experimental C?V?f and G/??V?f characteristics of these structures show fairly large frequency dispersion, especially at low frequencies. The frequency and voltage dependent distribution profile of Rs and Nss were obtained by using admittance spectroscopy and Hill-Coleman methods, respectively. In addition, the energy density of Nss distribution profiles as a function Ec-Ess was extracted from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height (?e). The average value of interface states was found about 1014 eV-1cm-2. The C?V plots exhibit anomalous peaks due to the Nss and Rs effect. Also, the effect of Rs on the C-V and G/?-V characteristics is found appreciable at higher frequencies due to decreasing values of C and G/? with increasing frequency. Because of the presence of Nss, the device behavior is different from the ideal case of C-V and G/?-V characteristics. These Nss can easily follow the a.c. signal especially at low frequencies and yield an excess capacitance, which depends on their relaxation time and cause a bias shift of the C-V and G/?-V curves.