Electrical and optical properties of photodiode structures formed by surface polymerization of P[(EGDMA-VPCA)-SWCNT] films on n-GaAs and n-Si semiconductors

In recent years, a major research and development has been revived in Schottky barrier diodes. This activity has been greatly inspired by the importance of metal contacts in semiconductor technology. The presence of a thin polymer layer on the semiconductor is known to play an important role in metal / semiconductor Schottky structures. Electrical and optical properties of conductive polymers are very important in terms of technology. In this study, firstly P[(EGDMA-VPCA) -SWCNT]/n-GaAs and P [(EGDMA-VPCA) -SWCNT]/n-Si photodiode structures were obtained by coating thin polymer film on n-Si and n-GaAs by surface polymerization technique. The electrical properties of these two different photodiodes were investigated. The current – voltage characteristics of the samples were examined by illuminating with different wavelength laser beams. Spectral sensitivity measurements were obtained using Oriel Cornerstone 260 VIS-NIR Monochromator system. The structures investigated have been found to be a good candidate for VIS (Visible) and NIR (Near Infrared) photodetector applications.