Investigation of electrical properties of Ni/PEDOT:PSS/crystal violet/p-Si/Al heterojunction depending on temperature

In this study; p-Si crystal was used as a base material. Al metal was enlarged on the matte surface of the crystal and the other shiny surface of the crystal was coated with the spin coating method, respectively, Crystal Violet and PEDOT: PSS materials. After, Ni metal was evaporated on these interface materials by thermal evaporation. Thus, Ni/Crystal Violet/p-Si/Al and Ni/PEDOT:PSS/Crystal Violet/p-Si/Al heterojunctions were obtained. When the I-V (current-voltage) characteristics of both structures are examined at room temperature, it is determined that the PEDOT: PSS material causes improvements in the electrical properties of the diode. I-V (current-voltage) measurements of Ni/PEDOT:PSS/Crystal Violet/p-Si/Al heterojunction were taken for different temperature values. Using different methods (Thermionic Emission, Cheung and Norde functions), some basic diode parameters such as ideality factor (n), barrier height (Φb) and series resistance (Rs) were calculated from I-V measurements of the diode. It was observed that the barrier height increases with increasing temperature, also the ideality factor and the series resistance values decrease with increasing temperature. These changes in parameters have been attributed to the inhomogeneity of the potential barrier. In addition, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of the diode.