Memristive switching time calculation with nonlineer dopant drift memrisitor models

Dr. Leon Chua described the Memristor as the fourth fundamental circuit element in addition to the resistor, inductor and capacitor in his study in 1971 and derived the properties of the memristor element from the relationship he named as the "missing relationship", which he considered to be between charge and flux. The discovery of TiO_2 thin films, which behave as memristors, was made in researches carried out in HP laboratories in 2008. Following this discovery, research on the structure, modeling, analysis and applications of this new electronic circuit element began. The transition from the minimum value to the maximum value or from the maximum value to the minimum value of the resistance of the memristor, which is called resistive or memristive switching, and the value of the time required for this transition are especially important for resistive computer memory applications. The switching time of a memristor is an important parameter that should be measured by experiments and calculated from the memristor parameters. In the literature, to the best of our knowledge, the resistive switching times have not been calculated except for the HP memristor model and a memristor model with a piecewise linear charge-flux characteristics. In this thesis, the memristive switching times of some well-known memristor models with nonlinear drift speed using a window function are calculated. Inspired by these results, a new memristor window function is proposed. The new model is compared with other memristor models used in this study. The results obtained from this study can be used to make more realistic memristor models in the future.