Monolayer transition metal dichalcogenide of production and characterization

In recent years, the studies related to monolayer transition metal dichalcogenide (TMDC) have aroused great interest. TMDC materials are promising in many applications such as nanoelectronics, photonics, energy storage, biosensors, optoelectronics. In this study, monolayer MoS2, WS2, MoSe2 structures of TMDC materials are made on various substrates by chemical vapor deposition (CVD) technique to grow TMDC materials with the large surface area by doing growth optimizations; and to have controlled and reproducible growth mechanisms. Characterization of TMDC materials enlarged with CVD; optical microscopy, micro-Raman spectroscopy and atomic force microscopy (AFM) were used. In the optical microscope, the light and dark field images of the materials are taken, and the distribution of the materials produced on the substrate, the information related to the size and uniformity of the materials are obtained. In Raman spectroscopy measurements, depending on the Raman peaks of the material produced, the number of layers is determined, photoluminescence measurements can be taken and information about the crystal structure of the material can be obtained. As a result of AFM measurements, the thicknesses of the materials can be measured and information about the surface tomography and roughness of the material can be obtained.