V2O5 transition metal oxide semiconductors produced byultrasonic spraying technique and investigation of structural,optical, electrical properties

In this study, vanadium pentoxide (V2O5) films were produced by ultrasonic spraying technique on glass substrates at 300 °C - 350 °C - 400 °C - 450 °C subsoil temperatures by setting experimental parameters. X-ray diffraction (XRD) analyzes and crystal structures of the obtained semiconductor thin films were investigated. Surface investigations of thin films were made using scanning electron microscopy (SEM). Produced films; structural, optical and electrical properties of the samples were determined depending on the substrate temperature. By using UV-VIS spectrophotometer, the optical properties of the films were investigated by basic optical absorption. The resistivities of the films were observed to decrease with increasing resistivity temperature when measured by the four-point method. As a result of these analyzes; the effect of the substrate temperature used to produce the film on the electrical, optical and structural properties of the films has been reached. Differences and similarities in the literature in the literature which we have experimentally made to achieve this study.