HEMT (high electron mobility transistor) distortion analysis
2009
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Advisor: Prof. Dr. H. Güçlü Yavuzcan ; Yrd. Doç. Dr. Remzi Yıldırım
Abstract (EN)
HEMT is extensively used in analog, digital and wireless communication systems due to low noise and high frequency operating conditions. In this study, temperature dependent stability analysis of GaN based HEMT was performed basing on Nyquist, Root-locus, Rolletti, Linville and Stern criterions. Regional stability intervals between Rolletti stability criterion (K) and temperature dependent scattering parameter related stability criterion (Delta) were determined. Volterra series expanded as power series up to third degree and small signal transfer functions were obtained. IMD frequency components acquired from four tone small signal input were analyzed in relation to the temperature and gate to source voltage. Additionally, asymmetrical IMD components were located.
Author
Dr. Levent Gökrem
Institution
How to Cite
Levent Gökrem (Doctorate thesis). HEMT (high electron mobility transistor) distortion analysis, 2009, Gazi University.
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