Characteristic features of a semiconductor discharge gap structure for high speed measurements

CHARACTERISTIC FEATURES OF A SEMICONDUCTOR DISCHARGE GAP STRUCTURE FOR HIGH-SPEED MEASUREMENTS (M.Sc Thesis) Hatice Hilal YÜCEL GAZİ UNTVERSITIY INSTITUTE OF SCIENCE AND TECHNOLOGY December 1999 ABSTRACT In this study we investigate the applicability of an IR image converter system with a semiconductor photodedector for recording radiation from a pulsed laser. The semiconductor cathode is Cr-doped GaAs. The IR pulsed laser excites the photosensitive semiconductor photodedector of the converter thus controlling the current densitiy and the visible light emission from the gas discharge layer. This device is promising for applications in slave mode photography of rapid processes in the spectral region of the pulsed AI2O3 : N/3 laser (k = 1.06pm). Moreover, visualization of spatial distributions pattern of the current density in an IR image converter with a gallium arsenide semiconductor photodedector are studied. The spatial distribution of the current in the filaments were determined by photometric analysis of the radiation emitted by a gas when a current passed through a sistem formed by a semiconductor and a gas discharge gap. This method ensured spatial resolution of ~10 mm"1 and made h possible to describe quantitatively the distribution involving a drop in the current density of > 102. Science Code Key Words Page Number Adviser 404.05.01. GaAs dedector, Laser pulse, Filament, Discharge emission 75 Doç.Dr.Bahtiyar SALAMOV