Design and fabrication of ZnO based transparent thin film transistor

In this thesis, design and fabrication of room temperature ZnO based transparent thin film transistors (TTFT's) were carried out by investigating optical and electrical properties.In TTFT structure, for channel semiconductor, ZnO; for drain-source electrodes, ITO; for gate electrode AZO and for gate dielectric SiO2 materials were used. The avarage optical transparancy value for the whole structure in the visible region in %84. Threshold voltage and the field effect mobility were calculated as VT 1.3 V, 8 cm2/V.s, respectively. The on/off ratio was calculated as 7x10^3 and the maximum obtained drain current was measured as ~125uA. With the spite of the experimental and theoritical results of this thesis, we have created a significant background in order to fabricate new generation TTFT's for transparent and flexible display applications.