Output beam characterization of 445 nm AlGaN semiconductor diode laser

In this thesis, the power and current are defined for the laser light characteristic of an AlGaN semiconductor laser with a wavelength of 445 nano-meter.Diode lasers are difficult to use because they are very sensitive to temperature and current. After stabilizing the current and temperature, the diffraction grating can be used to achieve frequency selectivity. The laser beam from one end of the diode laser and the diffraction beam installed in the Litro configuration are directed from the grating to the diode laser, so that the grating and the other side of the laser rotate the diffraction grating, forming a gap with wavelength between them to adjust the cavity diode laser. The output wavelength is adjusted by rotating the grating to direct the output beam. The light passes through the diffraction grating twice, and there is no loss in the light reaching the mirror by refracting from different angles, this is done by changing the angle of the mirror. Therefore, compared to the Littrow configuration, the Littman configuration will have a lower output power. (cw) holographic reflection diffraction grating with a wavelength of 445 nm. In this way, a more stable and reliable system was obtained in the beam direction by minimizing the beam output power loss during tuning in the setup created by using the Littrow configuration of the holographic reflective diffraction grating.