Ag: Znse ince filmlerinin malzeme ve cihaz karakterizasyonu

The aim of this thesis is to improve the electrical properties of ZnSe thin films by introducing silver (Ag) to the structure and investigate the thin film properties with regards to structural, morphological, and optical properties. In this work, ZnSe thin films were deposited with 2 wt%, 5 wt%, and 10 wt% silver (Ag) contribution on glass substrates. Present in group IB, Ag was used to increasing the electrical conductivity due to donor dopant in II-VI materials. The film layer was obtained by thermal evaporation of ZnSe and Ag evaporation sources. This method is simple, low cost, and widely used for II-VI semiconductor films. Furthermore, structural, surface morphology, roughness, optical absorption, and energy gap properties of the films were investigated. Finally, device properties of films using Si substrates with Al rear contact and In front contact were examined. The results indicate that Ag doping enhanced the electrical and device properties of ZnSe thin films. Ag:ZnSe/ Si/ Al heterostructure performed photodiode behavior.