The growth of AI 0.2 Ga 0.8 As/GaAs (100) nanostructure and the investigation of I-V properties

ivTHE GROWTH OF Al0.2Ga0.8As/GaAs (100) NANOSTRUCTURE AND THEINVESTIGATION OF I-V PROPERTIES(M.Sc. Thesis)Hilal GUMUSGAZI UNIVERSITYINSTITUTE OF SCIENCE AND TECHNOLOGYEylül 2005ABSTRACTIn this work, a Al0.2Ga0.8As/GaAs superlattice diode structure has been grownwith SEMİCON VG80H Molecular Beam Epitaxy (MBE) device. The structuralanalysis of the Al0.2Ga0.8As/GaAs superlattice diode structure were made byhigh-resolution X-ray diffraction (HRXRD). The Rocking and reflectivity scansmeasured by D8 discover X-ray device on (002) symmetric reflection ofsubstrate have been simulated using LEPTOS program within the frameworkof dynamic and kinematical theories. The presence of the satellite peaks in theobtained Rocking curves proved that the growth epilayers have enoughthickness and homogenity. For the investigation of the electrical characteristicsof the growth Al0.2Ga0.8As/GaAs superlattice diode structure, the Au/GaAscontact were formed. The forward bias current-voltage-temperature (I-V-T)characteristics of Au/Al0.2Ga0.8As/GaAs structures are studied over a widetemperature range between 80 K and 400 K.Science Code : 404.05.01Key Words : MBE, AlxGa1-xAs/GaAs, electrical characterization,structural characterization, I-VPage Number : 100Adviser : Prof. Dr. Suleyman OZCELIK