Surface passivation effects on electrical characteristics of Al/p-Si/Al and Al/V2O5/p-Si/Al structures

In this study, polished as fabricated p-type Si semiconductor with <100> oriention was used. Omic contact was performed by evaporating Al metal on the mat surface of cristal. Then, the p-Si was divided into four parts. Two of these parts was used for the reference diode and the other two was used for the interface layer diode. Anodic surface passivation was made to one of the pieces. Then, Al metal on the polished surface of both parts leaving was evaporated at 1x10-6 Torr pressure. Thus, reference Al/p-Si/Al and passivated reference Al/p-Si/Al structures were obtained under the same conditions. Anodic surface passivation was performed on one of the remaining two parts. Then on the other surface of both the parts, thin film of vanadium oxide was grown with Spray Pyrolysis thin film magnification technique. Structural, optical and morphological properties of the grown thin film were examined. In order to obtain stable states of the obtained films, the films were subjected to heat treatment at 500oC and their structural, optical and morphological properties were taken again. In a consequence of the XRD measurements, it was seen that the films initially having the V5O9 structure were converted into V2O5 structure by phase conversion after annealing. İnterface-layered Al/V2O5/p-Si/Al and passivated interface layered Al/V2O5/p-Si/Al structures were obtained by evaporating Al metali and under the same conditions and at 1x10-6 Torr pressure on the V2O5 film, surface features of which were examined. The current-voltage (I-V), capacity-voltage (C-V), conductivity-voltage (G/w-V) and capacitance-frequency (C-f) characteristics of these structures were studied at room temperature. Key words: Anodic Passivation, Schottky Diode, Spray Pyrolysis, Vanadium Oxide