Temperature dependence of characteristic parameters of the (Al-TiW+PtSi)-n-Si Schottky diodes

ivTEMPERATURE DEPENDENCE OF CHARACTERISTICPARAMETERS OF THE (Al-TiW+PtSi)-n-Si SCHOTTKY DIODES(M.Sc. Thesis)Elif MARILGAZI UNIVERSITYINSTUTE OF SCIENCE AND TECHNOLOGYDecember 2005ABSTRACTIn this study, we have used n-Si wafers with (111) orientation and having0.7 Ω.cm resistivity. The forward current-voltage (I-V) and reverse capacitance-voltage (C-V) characteristics of (Al-TiW+PtSi)-n-Si Schottky diodes have beenmeausered in the temperature range of 79-360 K and have been interpretedbased on of the assumption of a Gaussian distribution of barrier heights (BHs)due to BH inhomogeneities that prevail at the interface. The evaluation of theexperimental I-V data reveals an increase of zero bias barrier height (Φbo) and adecrease of idealty factor (n) with increasing temperature. Zero bias barrierheigth (Φbo) versus inverse temperature (1/T) plot was drawn to obtainedevidence of a Gaussian distribution of the BHs,and values of Φ bo=0.815 eV andσs=0.09 V for the mean BH and zero-bias standard deviation have beenobtained from this plot, respectively.vThus, a modified Ln(I0/T 2) - q2 σ o /2k2T 2 vs q/kT) plot gives Φ bo and A* as 0.822eV and 104.85 Acm-2K-2, respectively. It has been councluded that thetemperature dependent I-V characteristics of the devices can be succesfullyexplained on the basis of TE mechanism with Gaussian distribution of the Φb.Science Code : 404. 05. 01Keywords : Amorphous metal film, I-V measurements, Barrierinhomogeneities, TunnelingPage Number : 55Adviser :Associate Professor Şemsettin ALTINDAL