The investigation of gamma ray exposure to electrical and optical properties of al doped ZnO structures

As semiconductor ZnO thin films have high electrical conductivity and opticalpermeability materials used in most position respect of technological. Because of this considersproducting of the material and measuring of using respect of technological.In this study, forming ZnO thin films on various substrates and changes someparameters after gamma ray exposure of ranging Al doped ZnO thin films were investigated.Optic and electrical properties of as-grown films were measured. Electrical conductivity wasmeasured by Hall Effect measurement system at room temperature. Some optic parameters weredetermined by UV-Vis spectrometric method. Theoretical calculations on optical parameterswere compared with the ones that were obtained by experimental values. These measurementswere made after gamma ray exposure of the thin films and some changes were observed.Structural analysis of the the thin films was made with respect to X ray diffraction data.