Investigating of physcial properties of amorphous inte semiconductor material

ABSTRACTMASTER THESISINVESTIGATING OF PHYSICAL PROPERTIES OF AMORPHOUS InTeSEMICONDUCTOR MATERIALHandan BOSTANCIFırat UniversityGraduate School of Natural and Applied SciencesDepartment of Physics2006, Page: 80In this study, X-ray diffraction, electrical conductivity, optical and dielectrical propertiesof the InTe amorphous semiconductor material have been investigated. X-ray diffraction resultsshow that InTe sample has an amorphous structure. Temperature dependence of electricalconductivity of the sample has been investigated and the obtained results confirm that InTe is anamorphous semiconductor. The InTe sample shows photoconductivity behavior. The opticalband gap and optical constants of the sample were calculated using transmittance andreflectance spectra. In the sample, the direct optical transitions take place. The refractive indexdispersion curve of the sample obeys the single oscillator model. The dielectrical properties ofthe sample have been investigated as a function of frequency and temperature. It was found thatthe dielectrical parameters were changed with temperature and frequency. The electricalmodulus curves were used to analyze the dielectrical relaxation processes.Keywords: InTe, Electrical Conductivity, Amorphous Semiconductour, Dielectric constantI