Electrical and optical properties of Au/n-CdTe structures

In this study, the Au/n-CdTe structures were prepared on n type CdTe wafer (10x10x0,5 mm) with (111) orientation by metal evaporating method. The current-voltage (I-V) characteristics of prepared these structures have been determined in the temperature range 150-350 K. The evaluations of the experimental data, barrier heights, ideality factors and some other parameters of the Schottky diodes were calculated in the different light frequency ranges by using light filters. The barrier height was obtained 0,35 eV at room temperature. The barrier heights and the ideality factors are observed changing with light frequency. The barrier heights calculated from the I-V characteristics are found to decrease with increasing light intensity.