Analysis of electric and dielectric properties of Au/P3HT:PCBM/N-Si Schottky barrier diodes

In the last few decades, semiconductor technology has gained a significant importance with the improving technology and requesting for clean energy sources. Especially, the studies of organic semiconductor-based technologies have quite a large interest. The main reasons of being the center of attention of organic polymers in semiconductor technology are having the possibility of processing at low temperatures, being producible with a low cost, easy fabrication techniques and opportunity to produce the high performance devices. Through these features, many devices can be fabricated with organic polymers such as organic field effect transistors (OFETs), organic thin film transistors (OTFTs), Schottky diodes and organic light emitting diodes (OLEDs). Schottky barrier diodes (SBDs) are the most widely used diodes in electronic devices, because of their faster response time and low forward voltage drop compared to other diodes. In this thesis, the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diodes (SBDs) have been fabricated with different P3HT:PCBM mass ratios and electrical and dielectric characterization of Au/P3HT:PCBM/n-Si MPS SBDs were investigated in the dark and at room temperature the frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. As a result of C-V and G/w-V characterizations, the diyod resistance (Ri) and interface states density (Nss) have been obtained. Dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), ac conductivity (σac), and the real and imaginary parts of electric modulus (M' and M'') have been investigated for the diode which has the best results obtained from C-V and G/w-V measurements. The C-V and G/w-V measurements of Au/P3HT:PCBM/n-Si MPS SBDs were taken in the large frequency range (10 kHz – 2 MHz) and in the voltage range from -10.0 V to +10.0 V.