The investigation of capacitance-voltage (C-V) and conductivity-voltage (G/w-V) characteristics of Au/Si3N4/n-Si (MIS) structures

In this study, capacitance-voltage (C-V) and conductance-voltage (G/ ? -V) characteristics of Au/Si3N4/n-Si (MIS) structure with insulator layer Si3N4 deposited on n type Si substrate by radio frequency (RF) supettering method was investigated. The C-V and G/ ? -V measurements were performed by use of HP 4192A LF Impedance Analyser and considering series resistance (Rs) and interface state (Nss) effect in the frequency and temperature ranges of 1 kHz-1 MHz and 80-400 K, respectively. The Rs decreases with both increasing frequency and temperature. Also, the measured capacitance and conductance values were corrected for the effect of series resistance to obtain the real capacitance and conductance of MIS structure. The presence of Nss causes the C-V and G/ ? -V characteristics deviate from the ideal case. Interface states can follow ac signal particulary at low frequencies and thereby yield an excess capacitance.