Effect of the boric acide on the characterization of spray –deposited ZnS: B films

In this work,ZnS semiconductor films which belong to the II-VI group were prepared on glass substrate by of Spray Pyrolysis at substrate temperature 500 0C, by using ZnCl2(0.05M), CS(NH2)2 (0.05M) and 0%, 1%, 3%, 5% range H3BO3 (0,05M) solution. The structural properties of boron doped ZnS films have been investigated by (XRD) X-ray diffraction techniques. The X-ray diffraction spectra showed that boron doped ZnS films are polycrystalline and have a hexagonal (wurtzite) structure. The grain size, resitivity and hall mobilities which belongs to properties of electrity were defined and correlated with the substrate temperature (TS) at different range of Boric acide. The changes observed in the characterization of the films related to the different range of H3BO3 are discussed in detail.