The effect of Co2 and co gases on the electrical properties of Al/Al2o3/p-Si structure

In this study, Al/Al2O3/p-Si structure was made in by atomic layer deposition (ALD) method. The temperature dependent electrical characterization of produced sample was performed in gas atmosphere (carbon monoxide and carbon dioxide) at different temperatures (350 K-375 K-400 K and 450 K) and different gas concentrations (2000 ppm-1000 ppm-500 ppm-250 ppm-125 ppm-50 ppm). While CO and CO2 gas concentrations increases, sensitivities increases for both gases. Gas concentration of 2000 ppm, a maximum sensitivity was obtained in both gas. Increase in sensitivity occurred with increasing temperature. It was observed that the most acceptable working temperature was 450 K for both gas. In this temperature point, sensitivities for CO gas and CO2 gas were determined 19% and 28%, respectively.