Numerical investigation of the 2-dimensional carriers in AlQN/AlN/GaN--based (Q=Ga, In) transistors with multi-quantum well back-barriers

In this study, we investigated 2-Dimensional Electron Gas (2DEG) properties of AlQN/AlN/GaN/InGaN/GaN/AlGaN/AlN/GaN (Q=Ga,In) heterostructures based InGaN/GaN multiple quantum well with AlGaN and InAlN barrier by solving 1-dimensional self-consistent Schrödinger-Poisson equations. As a result, electron mobilities are analyzed dependent temperature and barrier thickness for heterostructures based multiple quantum well with InAlN barrier. Current-voltage characteristics are examined using this electron mobility values via Simba mobility model for different barrier thicknesses, channel lenghts and gate lenghts. 2DEG properties and current-voltage characteristics, which obtained via numerical and analytical calculations, help to produce sample and devices which have better electronic properties for further investigations.