Electrical and magnetoresistive characteristics of electrodeposited Schottky diode systems

In this study, by using n-Si substrate with (100) orientation, 300-400 µm thickness and 3-4 ?cm resistivity and phosphorus doped, thin film Schottky diode systems (Ni/n-Si SBDs and Co/n-Si SBDs which are electrochemically formed on n-type Si) are constructed and characterized. In the electrical characterization of these diodes, the current-voltage (I-V), the capacitance-voltage (C-V) and the conductivity-voltage (G-V) measurements are done. In addition, the magnetoresistive properties of these systems are investigated.We have determined laterally homogeneous barrier heights (BHs) of the electrodeposited Ni/n-Si and Co/n-Si SBDs by the help of the linear relationship between the effective BHs and the ideality factors which is experimentally and theoretically confirmed.The homogeneity or the uniformity of the Schottky BH is an issue with important implications on the theory of Schottky BH formation and important ramifications for the operation of Schottky barrier diodes and contacts. Thus, provided semiconductor substrate is well characterized, the homogeneous Schottky BH may be obtained even from the I-V characteristics of one contact. For this purpose, the Co/n-type Si SBDs with a doping density of about 1.22x 1015 cm-3 and Ni/n-type Si diodes with a doping density of about 1.25x 1015 cm-3 are prepared and the linear region with large BHs is used. The electrical characteristics of Ni/n-type and Co/n-Si structures were compared with each other at the room temperature.Key Words: Silicon, Schottky Barrier Diodes, Barrier inhomogeneity, Electrodeposition Method, Magnetoresistance