Production and characterization of carbon based thin films produced by ECR-MP plasma system

In this work, Carbon semiconductor thin films were deposited with Electron Cyclotron Resonance-Microwave Plasma System (ECR-MP) on glass and silicon substrates. Electrical, optical, structural properties of the carbon semiconductor thin films were investigated. The Metan (CH4) gas were used for producing plasma. The carbon semiconductor thin films were annealed at 200, 300, 400°C in nitrogen ambient. The annealing related changes of the optical parameters such as absorption, energy band gap, extinction coefficients have been determined. The optical properties of the films were obtained by a double beam computer controlled spectrophotometer (Perkin Elmer Lambda 2S) in the UV/VIS/NIR regions. Using the optical measurement results of the carbon films, energy band gap values were found to be 4.2 eV and found to decrease with annealing. X-ray diffraction technique was used to determine the structural parameters, the existent phases and the orientation of the carbon semiconductor thin films. The molecular structure of the films are determined by Infrared Spectrometer and the surface morphology of the films were studied by Atomic Force Microscopy.