PRODUCTION AND CHARACTERIZATION OF II-VI SEMICONDUCTOR COMPOUNDS BY CHEMICAL DEPOSITION ON DIFFERENT SUBSTRATES

In this study, CdS films were formed by the chemical bath deposition method at 80 °C on different substrates (Glass, FTO, and ITO). Glass/CdS/CdSe, FTO/CdS/CdSe, and ITO/CdS/CdSe heterojunctions were obtained with deposition of CdSe thin films for 4 hours, 6 hours, and 10 hours on CdS films. The optical, structural, electrical, and photoelectrochemical properties of these heterojunctions were determined. It was observed by the investigation of the SEM images that the heterojunctions have both nanoparticle and nanowire structures. The energy band gap (Eg) value of the semiconductor films was determined with UV-Vis spectroscopy and photoluminescence spectroscopy. The crystal structure of the films was investigated with XRD and it was found that the films have polycrystalline structure. The conductivity type of all films whose electrical properties were examined by Hall measurement was determined as n-type. The photoelectrochemical properties of the FTO/CdS/CdSe and ITO/CdS/CdSe heterojunctions were investigated under dark and light conditions with linear sweep voltammetry (LSV), amperometry (current-time), and electrochemical impedance measurements.