Optical and electrical characterization on GaP semiconductor

In this study, the current-voltage (I-V) measurements of the gold contact that are produced by vaporizing over n-GaP semiconductor are made between 125-375 K degrees. The results of the experiment prove that the I-V diagram of the contact is very close to that of a perfect diode. The current transportation mechanism is investigated, in the entire temperature range, corresponding both Poole Frenkel (PF) and Schottky type mechanisms. It is observed that PF type transportation is dominant in low temperature areas while Schottky type transportation is dominant in high temperature areas. The forbidden energy gap is determined as 2,21 eV by reflectance and transmictance measurements.