The investigation of electrical properties of metal-semiconductor contacts prepared with gap semiconductor

In this study, Au/n-GaP structures were prepared on n-type GaP semiconductor with orientation (100) and having 300 ?m thickness and carriers concentration of 1x1018cm-3 by metal evaporation method. Some basic electrical parameters of these structures were investigated in the range of 80K-380K. Prepared structure's current-voltage (I-V) specifications have been calculated under 80K-380K temperature ranges and ideality factor n, Schottky barrier heights ?B and other related diode parameters has been evaluated. At room temperature, it has been determined for barrier height as 0.785 eV and for ideality factor as 1.47. It has been observed that ideality factor decreases barrier height increases as temperature increases. Characteristics of current-voltage (I-V) at room temperature and characteristics of capacitance-voltage (C-V) which is bound to frequency range of 5 kHz-400 kHz has been analyzed. At 1 MHz frequency, capacitance-voltage (C-V) specifications has been analyzed depend on temperature. Density of interface states values were evaluated from I-V measurements and it has been noticed that it decreases as temperature increases. Using 1/C²-V graphic data; diffusion voltage VD, barrier height ?B, concentration of donor ND, width of depletion layer WD and insulation layer thickness has been calculated. At room temperature barrier height value has been calculated as 1.02 eV from C-V measurements.