The fabrication and characterization of InGaAs/InP ve InGaAs/GaAsquantum well solar cells

Within the scope of this study, for GS174, GaAs and GS249 which are of the structures of InGaAs solar quantum well solar cells (QWSC) was magnified using Molecular Beam Epitaxy (MBE) method on InP substrate. High Resolution X-Ray Diffraction (HRXRD), Atomic Force Microscope, (AFM), Scanning Electron Microscope (SEM) and Secondary Ion Mass Spectrometer (SIMS) analysis of magnified GS174 and GS249 QWSC structures were done. After the analysis, fabrication operations containing lithography and metallization steps were made to parts of GS174 and GS249 QWSC structures cut into two parts as 1x1 cm2. Upon completing the fabrication, one part of GS 174 and GS249 QWSC samples and glass substrate were covered with a 500 Å density Si3N4 antireflection layer. Optical permeability quality of antireflection layer on glass substrate was analyzed through UV-VIS spectrometer analysis. Analyzing Current-Voltage characteristics of GS174 and GS249 QWSC samples, it was found out that the antireflection layer raised the sensibility of solar cells to light.