Mobility analysis in InGaP semiconductors
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Abstract (EN)
MOBILITY ANALYSIS IN InGaP SEMICONDUCTORS(M.Sc. Thesis)Sedef Şebnem TUNALIOĞLUGAZI UNIVERSITYINSTUTE OF SCIENCE AND TECHNOLOGYJanuary 2007ABSTRACTIn this work, electron transport properties in n type In0,5Ga0,5P semiconductorgrown on GaAs by MOVPE crystal growth technique have been investigated.Conductivity, Hall mobility and carrier concentration were measured at thetemperature range 15-350K. Hall mobility has been analysed using ISBE andtwo band model. Hall carrier concentration has been analysed by using thePark model. Acceptor, donor impurity concentrations and donor activationenergy were also estimated experimentally.Science Code : 202.1.003Key Words : InGaP, Electron tranport, Hall mobility, ISBEPage Number : 53Adviser : Prof. Dr.Tofig MAMMADOV
Author
Sedef Şebnem Tunalıoğlu
How to Cite
Sedef Şebnem Tunalıoğlu (Master Thesis). Mobility analysis in InGaP semiconductors, 2007, Gazi University.
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